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SS10PH9 & SS10PH10
Preliminary
Vishay General Semiconductor
High Current Density Surface Mount High-Voltage Schottky Rectifier
FEATURES * Very low profile - typical height of 1.1 mm
K
* Ideal for automated placement * Guardring for overvoltage protection
1 2 TO-277A (SMPC)
K Cathode Anode 1 Anode 2
* High Barrier Technology, Tj = 175 C Maximum * Low leakage current * Meets MSL level 1, per J-STD-020C * Solder Dip 260 C, 40 seconds * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-277A (SMPC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked
MAJOR RATINGS AND CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 10 A IR Tj max. 10 A 90 V, 100 V 200 A 20 mJ 0.661 V 0.3 A 175 C
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A, L = 10 mH, Tj = 25 C Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM EAS dv/dt TJ, TSTG SYMBOL SS10PH9 10H9 90 10 200 20 10000 - 55 to + 175 SS10PH10 10H10 100 V A A mJ V/s C UNIT
Document Number 89000 24-Jul-06
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SS10PH9 & SS10PH10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER TEST CONDITIONS at IF = 5 A at IF = 10 A at IF = 5 A at IF = 10 A Reverse current (1) Typical junction capacitance Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle at rated VR at 4.0 V, 1 MHz Tj = 25 C VF Tj = 125 C Tj = 25 C Tj = 125 C IR CJ SYMBOL TYP. 0.725 0.800 0.581 0.661 0.3 0.3 270 MAX. 0.85 V 0.70 10 3.0 A mA pF UNIT
Instantaneous forward voltage (1)
THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Typical thermal resistance Note: (1) Units mounted on recommended P.C.B. 2 oz. pad layout SYMBOL RJA RJL
(1)
SS10PH9 60 3
SS10PH10
UNIT C/W
ORDERING INFORMATION
PREFERRED P/N SS10PH10-E3/86A SS10PH10-E3/87A UNIT WEIGHT (g) 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A BASE QUANTITY 1500 6500 DELIVERY MODE 7" Diameter Plastic Tape & Reel 13" Diameter Plastic Tape & Reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Average Forward Rectified Current (A)
12 Resistive or Inductive Load 9.0 7.5
Average Power Loss (W)
10
D = 0.8 D = 0.5 D = 0.3 D = 0.2 D = 0.1
8 6
6.0 4.5
D = 1.0
4 2 TL measured at the cathode band terminal
3.0
T
1.5 0
D = tp/T
0 1 2 3 4 5 6 7 8 9
tp
10 11
0 25 50 75 100 125 150 175
Lead Temperature (C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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Document Number 89000 24-Jul-06
SS10PH9 & SS10PH10
Vishay General Semiconductor
100
1000 Tj = 25 C f = 1.0 MHz Vsig = 50 mVp-p
Instantaneous Forward Current (A)
Tj = 175 C 10 Tj = 150 C 1 Tj = 125 C
Junction Capacitance (pF)
0.9 1.0
100
0.1
Tj = 25 C
0.01 0.1
10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 10 100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
100 Tj = 175 C
Instantaneous Reverse Current (mA)
Transient Thermal Impedance (C/W)
Junction to Ambient
1
Tj = 150 C
0.1 0.01 0.001
Tj = 125 C
10
0.0001
Tj = 25 C
0.00001 10 20 30 40 50 60 70 80 90 100
1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Document Number 89000 24-Jul-06
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SS10PH9 & SS10PH10
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75) 0.175 (4.45) K
0.016 (0.40) 0.006 (0.15)
0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05)
0.026 (0.65) nom
2
1
0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90)
0.047 (1.20) 0.039 (1.00)
Mounting Pad Layout
0.189 MIN. (4.80)
0.189 (4.80) 0.173 (4.40) 0.155 (3.94) nom 0.75 nom 0.268 (6.80)
0.186 MIN. (4.72)
0.049 (1.24) 0.037 (0.94) 0.084 (2.13) nom 0.053 (1.35) 0.041 (1.05) 0.041 (1.04)
0.050 MIN. (1.27)
0.055 MIN. (1.40)
Conform to JEDEC TO-277A
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Document Number 89000 24-Jul-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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